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| VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PIN Photodiode FEATURES * * * * * Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm2): 7.5 High radiant sensitivity VBPW34FAS * Daylight blocking filter matched with 870 nm to 950 nm emitters * Fast response times * * * * Angle of half sensitivity: = 65 Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC VBPW34FASR and in 21726 APPLICATIONS * High speed detector for infrared radiation * Infrared remote control and free air data transmissionsystems, e.g. in combination with TSFFxxxx series IR emitters DESCRIPTION VBPW34FAS and VBPW34FASR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 870 nm or 950 nm. PRODUCT SUMMARY COMPONENT VBPW34FAS VBPW34FASR Note * Test conditions see table "Basic Characteristics" Ira (A) 55 55 (deg) 65 65 0.5 (nm) 780 to 1050 780 to 1050 ORDERING INFORMATION ORDERING CODE VBPW34FAS VBPW34FASR Note * MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel REMARKS MOQ: 1000 pcs, 1000 pcs/reel MOQ: 1000 pcs, 1000 pcs/reel PACKAGE FORM Gullwing Reverse gullwing ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Acc. reflow sloder profile fig. 8 Tamb 25 C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW C C C C K/W Document Number: 81127 Rev. 1.1, 20-Apr-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 1 VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PIN Photodiode BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm TEST CONDITION IF = 50 mA IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm, VR = 5 V SYMBOL VF V(BR) Iro CD CD Vo TKVo Ik TKIk Ira p 0.5 NEP tr tf 45 60 2 70 25 350 - 2.6 50 0.1 55 65 950 780 to 1050 4 x 10-14 100 100 40 30 MIN. TYP. 1 MAX. 1.3 UNIT V V nA pF pF mV mV/K A %/K A deg nm nm W/Hz ns ns BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) I ra rel - Relative Reverse Light Current 1000 Iro - Reverse Dark Current (nA) 1.4 1.2 100 VR = 5 V = 950 nm 1.0 10 0.8 VR = 10 V 1 20 40 60 80 100 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (C) 94 8403 Tamb - Ambient Temperature (C) 94 8409 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com 2 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81127 Rev. 1.1, 20-Apr-10 VBPW34FAS, VBPW34FASR Silicon PIN Photodiode Vishay Semiconductors S(), rel - Relative Spectral Sensitivity 10 1000 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 700 800 900 1000 - Wavelength (nm) 1100 Ira - Reverse Light Current (A) 100 10 VR = 5 V = 950 nm 1 0.1 0.01 12787 0.1 1 Ee - Irradiance (mW/cm2) 21743 Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 0 10 20 30 Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (A) 1 mW/cm 2 0.5 mW/cm 2 0.2 mW/cm 2 10 0.1 mW/cm 2 0.05 mW/cm 2 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 1 0.1 12788 = 950 nm 1 10 100 VR - Reverse Voltage (V) 94 8406 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 80 CD - Diode Capacitance (pF) 60 E=0 f = 1 MHz 40 20 0 0.1 948407 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Document Number: 81127 Rev. 1.1, 20-Apr-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 3 - Angular Displacement VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PIN Photodiode PACKAGE DIMENSIONS FOR VBPW34FAS in millimeters 0.75 0.05 1.2 0.1 0.15 0.02 0.1 -0.1 Flat area 0.3 min. 4.4 0.1 2.2 0.18 0.2 Chip Size 3x3 1.6 0.1 0.8 0.1 1 0.15 6.4 0.3 technical drawings according to DIN specifications Recommended solder pad 8.9 5.4 Drawing-No.: 6.541-5086.01-4 Issue: 1; 15.04.10 22105 1.8 www.vishay.com 4 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81127 Rev. 1.1, 20-Apr-10 3.9 0.1 Anode Cathode 1.95 (0.47 ref.) VBPW34FAS, VBPW34FASR Silicon PIN Photodiode Vishay Semiconductors PACKAGE DIMENSIONS FOR VBPW34FASR in millimeters Flat area 0.3 min 0.1 min. 1.2 0.1 0.15 0.02 0.75 0.05 4.4 0.1 2.2 0.18 0.2 Chip Size 3x3 1.6 0.1 1.95 0.8 0.1 (0.47 ref.) 6.4 0.3 8.9 5.4 3.9 0.1 Anode Cathode 1 0.3 technical drawings according to DIN specifications Recommended solder pad Drawing-No.: 6.541-5085.01-4 Issue: 1; 15.04.10 22104 1.8 Document Number: 81127 Rev. 1.1, 20-Apr-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 5 VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PIN Photodiode TAPING DIMENSIONS FOR VBPW34FAS in millimeters 21730 TAPING DIMENSIONS FOR VBPW34FASR in millimeters 21731 www.vishay.com 6 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81127 Rev. 1.1, 20-Apr-10 VBPW34FAS, VBPW34FASR Silicon PIN Photodiode Vishay Semiconductors REEL DIMENSIONS FOR VBPW34FAS AND VBPW34FASR in millimeters 21732 SOLDER PROFILE DRYPACK 300 250 255 C 240 C 217 C max. 260 C 245 C Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Temperature (C) 200 max. 30 s 150 max. 120 s 100 50 0 0 50 100 150 200 250 300 max. ramp up 3 C/s max. ramp down 6 C/s max. 100 s FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 C, RH < 60 % DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 C (+ 5 C), RH < 5 % or 96 h at 60 C (+ 5 C), RH < 5 %. 19841 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Document Number: 81127 Rev. 1.1, 20-Apr-10 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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